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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 1)
W DSS
Single Pulse Drain-Source
V DD = –30 V,
I D = –4.5 A
90
mJ
Avalanche Energy
I AR
Maximum Drain-Source Avalanche
–4.5
A
Current
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
–60
–49
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = –48 V,
V GS = 20V,
V GS = –20 V,
V GS = 0 V
V DS = 0 V
V DS = 0 V
–1
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V GS = –10 V, I D = –4.5 A
–1
–1.6
4
76
–3
100
V
mV/ ° C
m ?
On–Resistance
V GS = –4.5 V, I D = –3.9 A
V GS = –10 V,I D = –4.5 A,T J =125 ° C
99
137
130
185
I D(on)
On–State Drain Current
V GS = –10 V, V DS = –5 V
–20
A
g FS
Forward Transconductance
V DS = –5 V,
I D = –3 A
8
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –30 V,
f = 1.0 MHz
V GS = 0 V,
759
90
39
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –30 V,
V GS = –10 V,
V DS = –30V,
V GS = –10 V
I D = –1 A,
R GEN = 6 ?
I D = –4.5 A,
7
10
19
12
15
2.5
14
20
34
22
24
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
3.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–3.2
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = –3.2 A
(Note 2)
–0.8
–1.2
V
Voltage
FDD5614P Rev C1(W)
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